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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION With TO-220F package Complement to type 2SD1913 High reliability. High breakdown voltage Low saturation voltage. Wide area of safe operation APPLICATIONS 60V/3A low-frequency power amplifier General power amplifier applications PINNING PIN 1 2 3 Emitter Collector DESCRIPTION Base PARAMETER Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base OND IC TOR UC VALUE -60 -60 -6 -3 -8 CONDITIONS UNIT V V V A A Open emitter Open collector TC=25ae PC Collector dissipation 20 W 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1mA; IE=0 IC=-5mA; RBE= IE=-1mA; IC=0 IC=-2A ; IB=-0.2A IC=-0.5A ; VCE=-5V VCB=-40V;IE=0 VEB=-4V;IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IC=-0.5A ; VCE=-5V 70 20 MIN -60 -60 -6 2SB1274 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V V V -0.4 -0.8 -1.0 -1.0 -0.1 -0.1 280 V V mA mA Transition frequency Output capacitance R hFE-1 classifications Q 70-140 IN ANG CH S 140-280 EMIC ES IE=0; VCB=-10V;f=1MHz DUC ON 100 60 TOR MHz pF 100-200 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1274 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 SEM GE HAN INC OND IC TOR UC 4 |
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